23% performance increase
Samsung’s new 12nm DDR5 DRAM chips are more power efficient and offer 23% higher performance than previous generation DRAM chips. According to the company’s statement, this improvement is achieved through the use of high-k material that increases cell capacitance and proprietary design technology that improves critical circuit properties. Combined with advanced, multi-layered, ultraviolet lithography, the new DRAM has the industry’s highest die density with a 20% increase in wafer efficiency.
7.2Gbps data transfer rate
Utilizing the latest DDR5 standard, Samsung’s 12nm class DRAM has a data transfer rate of 7.2Gbps per second. According to Samsung, this means processing a 30GB 4K UHD quality movie in one second.
Mass production will begin in early 2023
Samsung believes that the new DDR RAMs, which go through the 12nm manufacturing process, will lay the foundation for more sustainable business in areas such as next-generation computing, data centers and AI-powered systems, with exceptional performance and power efficiency. The company will begin mass production of the new DDR5 DRAM chips in early 2023.