SK Hynix, one of the leading names in the DRAM market, announced that 1bnm manufacturing technology, a first in the industry, will be available for data center products very soon. At this point, the production process to be used in the production of DDR5 and HBM3E (High-Bandwidth-Memory Extended) memories will offer a remarkable speed increase, especially in HBM3E memories.Date given for mass production
In today’s announcement, SK Hynix announced that its 1bnm manufacturing process has been validated for its first data center products. More importantly, 1bnm DDR5 memory will offer a 20 percent increase in efficiency compared to the 1anm process. However, the most important detail in the new announcement is that the new production process will be used by HBM3E.
SK hynix says that the memory that will be based on the new production process will enter mass production in 2024 and will reach 8 Gb/s data processing speed. It should be noted that this speed is 25 percent higher than HBM3, and 8 times higher than the first generation HBM memory. In addition, SK hynix has confirmed that the 5th generation DDR5 memory, whose initial compatibility tests have been completed, will be supported by the Intel Xeon Scalable platform. At this point, the giant manufacturer says that additional verification processes are ongoing.
Emphasizing both the performance and performance-per-watt figures of the new production process in the statement on the subject, Jonghwan Kim, Head of DRAM Development at SK hynix, said, “Amid increasing expectations that the memory market will start to recover from the second half, we believe that the 1bnm process will help us increase our earnings from the second half.” said.
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