In the SSD market, we see manufacturers reaching more dense memory capacities one after another. Micron produced 232-layer NAND memory for the first time, while SK hynix increased this figure to 238 layers.
SK hynix 238 layer 4D NAND memory
4D NAND technology places the booster circuit next to the memory chips under the chips. Thus, a new sequence emerges. Thanks to the new array, more storage space can be placed on a circuit board, while reducing costs. The firm has been working on 4D NAND for over 4 years.
232-layer NAND from Micron
The 238-layer 4D NAND memory module, which the company started sampling this week, is based on TLC cells. The new 4D NAND memories produced in 512Gb packages offer 34 percent more efficient production than 176 layers.
Reaching 2.4Gbps levels with a 50 percent increase in data transfer, the module also reduces energy consumption by 21 percent. The memory, which will be supplied to PC component manufacturers in mid-2023, will then come to smartphones and servers. It is also stated that 1Tb packages will be added to the options next year.
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