South Korean memory manufacturer SK Hynix has announced that it has showcased examples of the industry’s first 321-layer NAND flash memory. Making a presentation at the Flash Memory Summit (FMS) 2023 event in Santa Clara, the company reported on the progress made in the development of the 321-layer 1Tb TLC 4D NAND flash memory.First in the industry
SK Hynix was the first company to develop NAND flash memory with more than 300 layers in the industry. The company, which plans to raise the level of completion of 321 layered products and start mass production from 2025, said that the technological competitiveness gained from the success of the world’s highest 238-layer NAND, already in mass production, paved the way for smooth progress in the development of the 321 layered products.
With the development of 321-layer NAND flash memory, more cells are stacked on a single chip and a larger storage capacity is achieved, resulting in 59 percent more efficient productivity compared to the previous generation 238-layer NAND flash memory. Basically, we can say that the total capacity that can be produced on a single chip has increased.
AI effect
Since the launch of ChatGPT, which accelerated the growth of the productive AI market, the demand for high-performance, high-capacity memory products that can process more data faster has been growing rapidly. To meet this demand, SK Hynix is developing next-generation NAND solutions optimized in FMS. These solutions include enterprise SSDs that support the PCIe Gen 5 interface and UFS 4.0.While SK Hynix plans to reach industry-leading performance with these products, it aims to meet the requirements of high-performance and high-capacity NAND flash memories. SK Hynix also announced that they will start to develop the next generation PCIe Gen 6 and UFS 5.0 with the solution technology they have developed thanks to these products, and they will continue to lead the industry trend.
Jungdal Choi, Head of NAND Development at SK Hynix, says the continued development of 321-layer NAND flash memory will solidify the company’s technological leadership. Choi emphasizes that with the timely introduction of high-performance and high-capacity NAND flash memories, they will work to meet the requirements of the age of artificial intelligence and lead innovation.
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