South Korea-based semiconductor manufacturer SK Hynix has officially announced the world’s first 12-layer HBM3 memory, which significantly increases capacities compared to the previous generation. According to SK Hynix, the new memory offers a significant 50 percent increase in memory capacity compared to the previous generation. While products that will use these memories have not been announced, it seems likely that Nvidia and AMD will offer higher-capacity refreshes of their existing Hopper and Instinct products later this year with a new memory design.Industry first from SK Hynix
SK Hynix announced that it has developed the world’s first 12-layer HBM3 memory, which increases capacities up to 24 GB per stack. According to SK hynix, 12-layer HBM3 stacks provide a 50 percent increase in memory capacities compared to previous 8-layer HBM3 stacks, which offered memory capacities of up to 16GB.
HBM (High Bandwidth Memory – High Bandwidth Memory): It can be described as a type of high-performance memory that vertically connects multiple DRAM chips and significantly increases data processing speed compared to traditional DRAM products. HBM3 is considered as the 4th generation product following the previous HBM, HBM2 and HBM2E generations.SK Hynix engineers underlined that by applying advanced MR-MUF (Advanced Mass Reflow Molded Underfill) technology to the latest version, they increased process efficiency and performance stability, and with TSV (Through Silicon Via) they reduced the thickness of a single DRAM chip by 40 percent, reaching the same stack height level as the 16GB product. he draws. The company also states that they are sending samples of the new memories to their customers. High-capacity HBM3 memories are expected to play a critical role in the development of productive AI tools.
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