Compared to the previous efficiency issue, the efficiency of the first-generation Samsung 3nm manufacturing process has reached a near-perfect level, according to a new report. In addition, a Samsung executive has stated that the second generation 3nm chip technology is also developing.Samsung: We’re Closer to Perfection
Previous reports caused great concern for Samsung, as it was reported that TSMC’s efficiency rate reached 80 percent, but Samsung’s 3nm process was stuck at 20 percent. Now, however, Samsung’s 3nm GAA technology is said to have been greatly improved and is now “near perfect”.
Samsung’s 3nm technology
Prior to TSMC, Samsung started 3nm production about six months ago, while manufacturing efficiency had dropped drastically due to the adoption of GAA. The company had to collaborate with IBM, Silicon Frontline Technology and other companies to increase 3nm efficiency. Samsung said that FinFET technology has reached its limits as the reason for switching to GAAFET (Gate-all-Around Field-Effect Transistor) instead of FinFET (Fin Field-Effect Transistor). Compared to FinFET, GAAFET offers advantages such as smaller footprint, higher speed, less leakage current and lower voltage.In addition, Samsung promises a 45 percent increase in energy efficiency and a 23 percent increase in performance compared to the 5nm process with 3nm GAA. In the second generation 3nm, according to Samsung, energy consumption is halved and performance is increased by 30 percent.
According to TrendForce analysis, TSMC ranks first with a 53.4% share in the global casting market, while Samsung has only 16.4% market share. On the other hand, TSMC had made a serious price increase in 3nm plate prices. If Samsung wants to produce the next generation chips of Qualcomm and MediaTek, it has to close the efficiency gap with TSMC.
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