The distance of millions of transistors in chips, which are the most basic building blocks of technological devices, and the number of these transistors directly affect the performance of the chip. Therefore, the world of technology continues to reduce the distance between the transistors on the chip and increase the number of transistors.
Today, while the distance between transistors has started to decrease to only 3 nanometers (nm), an important statement came from Samsung today. Foundry, Samsung’s semiconductor manufacturing department, announced in its new announcement that 3 nm semiconductor chips have begun to be produced at its Hwaseong factory in South Korea.
23% better performance will be offered:
Samsung has also made a significant change in its new 3 nm chips. The company, which previously used FinFET as its transistor architecture, shared that it will now adopt the GAA (Gate All Around) architecture. The company reported that with this change in architecture, power efficiency will also increase.
According to Samsung’s statement, the new 3 nm chips will offer 23% better performance and 45% less power consumption than the previous generation 5 nm chips. However, the company shared that it will also offer 50% power efficiency and 30% better performance in second-generation 3 nm chips. Samsung will present the new production process to all its customers, such as Siemens and Cadence.
Samsung became the first chip manufacturer to implement the 3 nm manufacturing process.
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