South Korea-based technology giant Samsung shared its 1,000-layer V-NAND and GDDR7 plans at the Tech Day conference held in San Jose. Samsung Tech Day has been held every year since 2017. This year’s conference was held face-to-face with the audience for the first time after the pandemic.Next-generation V-NAND and GDDR7 memory on the way
Making statements in the field of DRAM for the first time at the event, Samsung announced that the fifth generation 10 nm class production (1b technique) will start until 2023. In addition, the company, which is ahead of its competitors in the currently used 14nm class nodes, announced that ‘exploratory research continues in sub-10nm DRAM production’ using new patterns, materials and architectural designs that include High-K gates.
When it comes to NAND, Samsung continues to work on 9th and 10th Generation V-NAND. The company, which has started shipments of 7th Generation 176-layer V-NAND today, plans to release 8th Generation 230-layer V-NAND chips by the end of the year. In addition, the tech giant expects to reach a 1,000-layer V-NAND design by 2030, with even more significant increases.
In the continuation of the event, Samsung also touched on the GDDR7 technology that will power the graphics cards of the future. The new standard will offer an increase of up to 36 Gbps compared to the 18 Gbps GDDR6 memory currently used. Thus, approximately 1,728 TB/sec bandwidth can be obtained on the graphics card with a 384-bit bus.
33501
