Samsung, one of the world’s leading memory manufacturers, announced that it has mass-produced DDR5 DRAM, which it produces with 14nm technology.
Samsung saves 20 percent power with 14nm DDR5 DRAM
Explaining that it produces the new generation DDR5 DRAMs with extreme ultraviolet (EUV) lithography, the company underlined that the performance has increased by 20 percent compared to the previous generation. In addition, the company stated that the power consumption per chip has also increased by 20 percent compared to the previous generation.
Samsung, the largest memory chip maker, announced in March 2020 that it has applied EUV to 5 layers in DRAM production for the first time in March 2020. The company, which wants to maintain its leadership in the memory market, announced that it will apply UEV to more DRAM layers.
Announcing that it developed a DDR5 DRAM module with a capacity of 512 GB with 16 GB chips in March 2021, the company stated that it will offer a module with a 24 GB chip for efficiency.
Jooyoung Lee, Senior Vice President and Head of DRAM Product and Technology, Samsung Electronics, said, “Today, Samsung broke another technology milestone with the multi-layer EUV that enables extreme reduction at 14nm. It is not possible to carry out the process we have done with conventional argon fluoride (ArF). We will continue to offer different memory solutions by addressing the need for more performance in the world of 5G, artificial intelligence and big data. ” said.
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