A while ago, Samsung introduced a “special type of DRAM” that it claims is perfect for mobile AI and gaming applications. The new memory is called LLW DRAM, which stands for Low Latency Wide IO. This technology is reportedly more efficient at processing real-time data than the LPDDR modules currently used in most mobile devices.LLW DRAM attack from Samsung
Due to its lower latency, Samsung claims that this particular type of LLW DRAM is an excellent choice for gaming and AI applications. Samsung first announced that it had developed LLW DRAM at Tech Day in January this year. The company also briefly talked about LLW at Memory Tech Day in October, where it introduced the HBM3E Shinebolt and LPDDR5X CAMM2 solutions.
Now, Samsung has shared a video showcasing the possibilities of LLW DRAM. The short video shows four types of devices that can benefit from this feature: smartphones, laptops, gaming consoles and XR devices. Judging by this video, the LLW solution is usually located right next to the CPU on an SoC, which makes sense given the “Low Latency” claims. But interestingly, the video highlights that LLW chips will work alongside the CPU rather than replacing traditional DRAM.It may bypass the Galaxy S24 series
Although Samsung showcased a smartphone in the video, it did not specify any timeframe for the launch of this new technology. Or the detailed features of the technology were not mentioned. On the other hand, the upcoming Galaxy S24 series is basically ready at this point and is estimated to launch as early as January next year.
As we said above, the LLW module is shown right next to the SoC. So the SoC will need to accommodate this. Considering that the Galaxy S24 series uses both Qualcomm and Exynos chips, it does not seem likely that the LLW module will be in this generation. Therefore, users may have to wait at least for the Galaxy S25 series to experience LLW DRAM technology.
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