San Jose-based NEO Semiconductor is launching what it calls a breakthrough solution for increasing DRAM chip density with 3D stacking technology. While the new memory chips greatly increase the DRAM capacity, they stand out with their low cost. According to the company, the capacity bottleneck of DRAM will be solved thanks to the 3D X-DRAM technology they have developed.Inspired by SSDs
NEO Semiconductor says 3D X-DRAM is the world’s first 3D NAND-like technology for DRAM memory, a solution developed to solve the capacity bottleneck of DRAM, and will replace “the entire 2D DRAM market.” The company states that its solution is better than competing products because it is much more useful than other options on the market today. The company states that it has developed 3D X-DRAM technology, inspired by 3D NAND technologies (used in SSDs). It is also stated that the production of new memories will be carried out with existing infrastructures.4TB RAM is coming
According to the company’s roadmap, 1Tb (1 terabit) integrated circuits will be reached by 2030 with 3D X-DRAM. 1Tb integrated circuits easily enable capacities of 2TB in a single RAM -with RAMs having 8 chips on each side. If RAMs with 32 integrated chips are desired to be made, this capacity can reach up to 4 TB levels. Of course, 4TB of memory is not something that an ordinary user needs, but considering that information is data and an incredible amount of digital information is produced every year, new RAMs could revolutionize servers.NEO Semiconductor says 3D X-DRAM uses a 3D NAND-like DRAM cell array structure based on capacitorless floating body cell technology. This cell structure simplifies the number of steps in the process, providing a “high-speed, high-density, low-cost and high-throughput solution” for 3D system memory fabrication. NEO Semiconductor estimates that the new 3D X-DRAM technology can reach a density of 128 Gb with 230 layers, which is 8 times greater than today’s DRAM density.
9110
