Micron UFS 4.0 memories will increase performance
The new chips are built on Micron’s 232-layer 3D NAND memory and offer capacities of up to 1TB. The manufacturer also claims that “highly configurable firmware” combined with technological improvements offers unmatched performance for flagship smartphones. Micron’s UFS 4.0 chips can achieve 4,000MB/s sequential write and 4,300MB/s sequential read speeds using triple-level cells (TLC) with 100 percent write and 75 percent increased read bandwidth.
Micron states that it uses memory cells stacked in more layers in UFS 4.0 chips to achieve responsiveness and faster load times. This new six-plane NAND architecture will be available on devices using 512GB and 1TB UFS 4.0 chips, while the 256GB configuration will use quad-plane NAND.
Efficiency increases by 25 percent
Micron promises to mass-produce the new UFS 4.0 storage chips in the second half of 2023 and offer smartphone manufacturers three storage configurations: 256GB, 512GB and 1TB. Micron’s new storage will be available for flagship phones as well as cars, computer systems and other devices that require low-power memory with high performance and consistent reliability.