Kioxia and Sandisk announced the 10th generation 3D Nand Flash memory technology. The new memory offers better performance, advanced lice density and power efficiency up to 33 %compared to previous generations.

What does the new Nand memory offer?

Kioxia’s new 3D flash memory includes CMOS Directly Bonded to Array (CBA) technology, created by combining a separate CMOS plate and a cell series plate. This is not an innovative feature, because Kioxia’s 8th generation was also included in 3D Nand Nand products. However, the main innovation was the new interface standard Toggle DDR6.0, which allows the NAND interface speed up to 4.8 GB/s.

Kioxia says the 10th generation is up to 33 %faster than the 8th generation. According to the 8th generation, the new generation of memory significantly increases the number of layers from 218 layers to 322 layers. Although 322 layers are far from the company’s goal of producing 3D Nands with 1,000 layers by 2027, it is still an impressive success. Kioxia, 322 layer 3D Nand’s bit density of 59 %, he says.

The new NAND also includes Power Isolated Low-Tapped Termination (PI-LTT) technology, which reduces power consumption by 10 %for entry and 34 %for output. Kioxia says that their focus on power productivity stems from the increasing demands of artificial intelligence technologies.