Samsung is preparing to start mass production of 8th generation V-NAND memory, promising higher performance and more capacity for solid state storage devices. Samsung was well ahead of its competitors in 2013 thanks to its 24-layer V-NAND memory, but it has been caught by its competitors as it becomes difficult to create more layers.
During the year, Micron and SK Hynix announced that they were developing their own NAND technologies. Sk Hynix answered the 232 layer solution from Micron with 238 layer TLC NAND memories. On the Samsung side, the answer was not long ago: the company has come to the end of the road for mass production of 8th generation 3D V-NAND memories with 236 layers.
It will offer higher speed and storage
Samsung, which wants to offer competitive storage solutions with the new generation PCIe Gen 5 interface for desktops and laptops, also wants to produce new generation memories for UFS 4.0 and UFS 3.1 technologies on the mobile side. Currently, 7th Gen V-NAND memory can offer speeds up to 2/GT/s, but for now we do not have any information about the speeds of 8th Gen V-NAND memories. But Samsung wants to offer more speed, more storage and more energy efficiency overall.
US-based Micron announced its new investment of $ 40 billion
According to Statista, the Korean tech giant has a 35.3% share of the NAND flash market in the first quarter of 2022. Samsung has taken a significant lead over Kioxia, the second-ranked NAND memory manufacturer, which follows it with a market share of 18.9%.
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